Company Overview
Sidense provides secure, very dense and reliable non-volatile, one-time programmable (OTP) memory IP for use in standard-logic CMOS processes with no additional masks or process steps. The Company's innovative one-transistor 1T-Fuse™ architecture provides the industry's smallest footprint, most reliable and lowest power Logic Non-Volatile Memory (NVM) IP solution. With over 70 patents granted or pending, Sidense OTP provides a field-programmable alternative solution to Flash, mask ROM and eFuse in many OTP and MTP applications.
Sidense OTP memory, embedded in over 100 customer designs, is available from 180nm down to 40nm and is scalable to 28nm and below. The IP is offered at and has been adopted by all top-tier semiconductor foundries and selected IDMs. Customers are using Sidense OTP for analog trimming, code storage, encryption keys such as HDCP, WHDI, RFID and Chip ID, medical, automotive, and configurable processors and logic.
Role Summary:
This newly created role of Director of Research and Development will work directly with the Chief Technology Officer to lead new product definition and implementation for Sidense. The Director of R&D will be a key contributor to the Company roadmap by proposing and evaluating new and improved product concepts and applications. The Director will lead a dedicated Research and Development team developing novel embedded NVM Memory IP products from concept to volume production in the most advanced process nodes. The R&D team will work on OTP memory design, including device engineering, layout and circuit design, hardware design and memory compiler development.
Required Qualifications:
Leadership and Management Skills Requirements:
Essential Product and Design Skills: