Company

Company

Sidense Corp., founded in 2004, is a leading developer of silicon-proven embedded non-volatile memory (NVM) intellectual property (IP). Sidense's patented one-time programmable (OTP) memory enables a wide range of electronic products which are based upon complex System on Chip (SOC) semiconductors. End-market products include home entertainment consumer products, cellular telephones, RFID, medical, automotive and a host of other uses.

Semiconductor and systems companies integrate Sidense IP cores into their SOC designs, saving time and money and allowing them to focus on the core competencies that differentiate their products. Sidense provides IP which is difficult and uneconomical for the device makers to try to create on their own.

Important requirements of Sidense customers include the need to incorporate NVM that can be manufactured on a standard-logic CMOS process, has very small area footprints, very fast read access times, the inability to be reverse engineered, and very low operating power consumption. Sidense is the only supplier of NVM IP that can meet all of these demanding requirements.

Sidense IP is available from many popular top-tier foundries from 180nm to 20nm.

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 Company Milestones

2004

  • Sidense Corp. founded
  • Applied for 1T-Fuse™ patent

2005

  • Headquarters opened in Ottawa, Ontario, Canada
  • Working 130nm silicon achieved

2006

  • Customers in 90nm and 65nm
  • First 90nm product shipped
  • Venture capital funding received

2007

  • Sidense moves into new current office on Hines Road
  • Production in 130nm and 90nm
  • Working 65nm silicon achieved
  • 1T-OTP macros qualified in UMC 130nm process
  • First patents issued for Split-Channel Antifuse Array Architecture

2008

  • SLP low-power OTP product launched
  • Additional venture capital funding received
  • EE Times Emerging Startup Top 60 list
  • Red Herring Canada Top 50 award
  • Deloitte Technologies Fast 50 Companies to Watch award
  • First patents issued for High Speed OTP Sensing Scheme

2010

  • ULP ultra low power OTP product launched
  • Additional venture capital funding received
  • Record bookings achieved for FY2010
  • First patents issued for Anti-fuse Memory Cell

2011

  • Additional venture capital funding received
  • 1T-OTP macros qualified at in GLOBALFOUNDRIES 180nm, 130nm and 65 nm processes
  • SLP products available for On Semiconductor’s 180nm process
  • SLP and ULP products meet TSMC9000 assessment requirements
  • First antifuse OTP supporting 1.8V IO at 40nm and 28nm
  • SiPROM products meet TSMC9000 assessment requirements at 130nm and 90nm low-power
  • Sidense granted all claims by US Patent and Trade Office in Key Patent Dispute
  • Patent issued for Low Power Antifuse Sensing Scheme with Improved Reliability

2012

  • 100th customer licensed
  • Record bookings achieved for FY2012
  • First 28nm 1T-OTP macros licensed
  • Sidense wins patent infringement case against competitor

2013

  • Hine Rd. office space expanded for growing staff
  • SHF OTP product for advanced process nodes launched
  • Federal Court affirms dismissal of all competitor’s patent infringement claims against Sidense
  • 1T-OTP qualified for 150°C operation in TSMC180nm BCD process
  • 1T-OTP qualified for MagnaChip 180nm mixed-signal and HV CMOS processes
  • 1T-OTP macros meet JEDEC accelerated testing qualifications at Two TSMC 28nm Process Nodes
  • Record FY2013 achieved • Patent issued for Twin Well Split-Channel OTP Memory Cell

2014

  • OTP meets TSMC9000 requirements for 180BCD Gen II process
  • New company website launched
  • Sidense granted motion for legal fee recovery in failed patent infringement case
  • Working 1T-OTP bit cells at 16nm FinFET technology
  • New COO and VP of Business Operations

2015

  • Judge Orders Kilopass to Pay Sidense $5.5 Million in Legal Fees and Costs
  • Sidense qualifies GLOBALFOUNDRIES 28SLP and 28HPP processes

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