
SiPROM provides the broadest range of process node coverage - from 130nm down to 40nm. Densities up to 512 Kbits per macro are available and multiple macros can be used for higher memory capacity, making SiPROM an ideal and field-programmable replacement for masked ROM and, in certain applications, external Flash memory. Designers can choose between four read modes to trade off memory density, read access time, enhanced reliability and enhanced security, and different read modes may be combined in the same macro.
SiPROM macros contain a built-in charge pump, which provides the voltage necessary to program the memory in the field after the chip is packaged. Alternately, programming voltage may be supplied externally through a pad on the chip.
Other SiPROM features include:
SiPROM uses include HDCP encryption keys, analog trim and calibration, boot code and firmware storage, Chip ID, RFID, and other mobile and wireless, medical, and automotive applications.
SiPROM macros are ideally suited to a wide range of applications including:
Uses for SiPROM macros include:
| Memory bitcell | Sidense 1T-Fuse |
| Density | 8Kbit 512Kbit (can use multiple macros for Mbits) |
| Process nodes | 130nm to 40nm |
| Power Supply | Integrated in macro (uses standard Vcc and Vdd) |
| Retention | > 10 years |
| Key features |
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Document |
To Access |
| SiPROM Product Brief | Click here to download. |
| Application Briefs | REGISTRATION REQUIRED. |
| SiPROM User Manual | NDA REQUIRED. |
| Datasheets | NDA REQUIRED. |